Technology Development Intern, RF GaN (Summer 2027)

What you’d do

Internship on the technology development team working on GaN HEMT development for RF applications, including setting up process modules and measurement structures, running and analyzing experiments, and collaborating with device, integration, and Fab9 engineering teams. Full time, Summer 2027. Found on the employer's careers page on Oct 21, 2026. Apply through the link.

You’ll need

• Pursuing a Master's or Ph.D. in Electrical Engineering, Solid State Physics, or related field
• Enrolled in an accredited degree program during the internship
• GaN HEMT development for RF applications
• Experiment design and analysis
• Process integration and electrical characterization